P-N Junction Diode

Which of the following circuit diagram of p – n junction diode is (i) forward bias and in (ii) reverse bias:
    

The reverse current in a Zener diode starts increasing suddenly at a relatively low breakdown voltage of $5 \mathrm{V}$ or so. Is this statement true or false?

If each diode has a forward bias resistance of $25\mathrm{\Omega }$  in the below circuit,

Which of the following options is correct?

In the given circuit, the current $I$ through the battery will be

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R

Assertion A: Diffusion current in a $p-n$ junction is greater than the drift current in magnitude if the junction is forward biased.

Reason R: Diffusion current in a $p-n$ junction is form the $n$-side to the $p$-side if the junction is forward biased.

In the light of the above statements, choose the most appropriate answer from the options given below.

The diagram shows the formation process of a p-n junction diode Identify the arrow representing

(i) Electron Diffusion

(ii) Electron Drift

Following circuit contains diodes with forward bias having resistance $25 \mathrm{\Omega }$ and reverse bias having infinite resistance. The ratio of $\frac{I_1}{I_2}$ is equal to

In the given figure, a p-n Junction is

Categories each of the following junction diodes as either forward biased or reverse biased. Give reason for each answer.

In an ON state, the individual Silicon and Germanium diodes, allow a voltage drop of $0.7 \mathrm{V}$ and $0.3 \mathrm{V}$ respectively across them. In the circuit shown, the Si and the Ge diode, are connected in a parallel combination to a voltage source of $10 \mathrm{V}$.

What is the voltage $V_0$ for the circuit network?

In the given circuit, the equivalent resistance (in$\Omega$ ) between$A$and $B$ is (if $A$has positive
potential and $B$ has negative potential) (Diodes are assumed to be ideal)

$4$ ideal diodes are connected as shown in the circuit, the current through $50 \Omega$ is

An ac voltage of peak value $20 \mathrm{V}$ is connected in series with a silicon diode $\left(V_{\mathrm{b}}=0.7 \mathrm{V}\right)$ and a load resistor ($380 \mathrm{\Omega }$ ). If the forward junction resistance of the diode is $6 \mathrm{\Omega }$, then, peak diode current and peak load voltage are

If the potential at $A$ is greater than the potential at $B$, then the equivalent resistance of the circuit across $AB$ is

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Identify the incorrect statement with respect to depletion layer.

The increase in the width of the depletion region in a $p$-$n$ junction diode is due to:

In diode, increasing the forward voltage, the thickness of depletion layer ____

Can a slab of p-type semiconductor be physically joined to another n-type semiconductor slab to form a p-n junction? justify your answer.

In the given circuit, the approximate value of voltage drop $V_o$ across $R$ is

Sketch the voltage across the central $2.2 \mathrm{k\Omega }$ resistor as a function of time. Take current in left direction as positive.